TN1215-800G STMicroelectronics, TN1215-800G Datasheet

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TN1215-800G

Manufacturer Part Number
TN1215-800G
Description
SCR
Manufacturer
STMicroelectronics
Datasheet

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FEATURES
DESCRIPTION
The TN1215 series of Silicon Controlled Rectifiers
uses a high performance glass passivated tech-
nology.
This SCR is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE MAXIMUM RATINGS
January 1998 - Ed: 4
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
Symbol
Symbol
I
T(RMS)
V
V
I
I
dI/dt
T(AV)
T
TSM
I
DRM
RRM
T
Tl
2
stg
t
j
RMS on-state current
(180 conductionangle)
Average on-state current
(180 conductionangle)
Non repetitive surge peak on-state current
(Tj initial = 25 C)
I
Critical rate of rise of on-state current
I
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Repetitive peak off-state voltage
Tj = 125 C
2
G
t Value for fusing
= 100 mA
dI
G
/dt = 1 A/ s.
Parameter
Parameter
tp = 8.3 ms
Tc= 110 C
Tc= 110 C
tp = 10 ms
tp = 10ms
A
600G
D
600
2
- 40 to + 150
- 40 to + 125
PAK
TN1215-
Value
146
140
100
260
K
12
98
TN1215-G
8
A
800G
800
G
SCR
A/ s
Unit
Unit
A
A
A
A
V
C
C
2
s
1/5

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TN1215-800G Summary of contents

Page 1

... FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TN1215 series of Silicon Controlled Rectifiers uses a high performance glass passivated tech- nology. This SCR is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE MAXIMUM RATINGS Symbol I RMS on-state current ...

Page 2

... TN1215-G THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient (S=1cm Rth(j-c) Junction to case for D.C GATE CHARACTERISTICS ( (AV) GM ELECTRICAL CHARACTERISTICS Symbol Test Conditions 12V (DC 12V (DC 3. DRM 100mA Gate open ...

Page 3

... Zth(j-c) 0.10 0.01 100 125 1E-3 1E-2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I (A) TSM 160 120 100 120 140 1 10 TN1215-G ) for different thermal case Tcase ( C) Rth=3 C/W Rth=0 C/W 110 115 120 Tamb( C) 125 60 80 100 120 140 Zth(j-a) tp(s) 1E-1 1E+0 1E+1 1E+2 5E+2 Tj initial=25 C ...

Page 4

... TN1215-G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and cor- 2 responding value (A),I t(A s) TSM 500 I TSM I t 100 tp(ms Fig. 9: Thermal resistance junction to ambient ver- sus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35 m). ...

Page 5

... A1 2. 0. 8.95 E 10. 15.00 L2 1. MARKING: TN1215 x00G 5.08 1.30 TN1215-G DIMENSIONS Inches 4.60 0.169 0.181 2.69 0.098 0.106 0.23 0.001 0.009 0.93 0.027 0.037 1.40 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 ...

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