C3507 Panasonic, C3507 Datasheet

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C3507

Manufacturer Part Number
C3507
Description
Search -----> 2SC3507
Manufacturer
Panasonic
Datasheet
1.C3507.pdf (4 pages)
www.DataSheet4U.com
Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High-speed switching
• High collector-base voltage (Emitter open) V
• Satisfactory linearity of forward current transfer ratio h
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Base current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter sustaining voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
screw
2. * : V
CEO(SUS)
Parameter
Parameter
test circuit
T
a
= 25°C
50 Hz/60 Hz
mercury relay
*
120 Ω
C
Symbol
6 V
V
V
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
CEO(SUS)
P
I
I
T
CBO
CEO
EBO
CES
CP
C
I
I
C
B
stg
CE(sat)
BE(sat)
C
h
j
CBO
EBO
t
t
f
stg
t
on
FE
= 25°C
T
f
−55 to +150
CBO
Rating
I
V
V
V
I
I
V
I
I
V
1 000
1 000
C
C
C
C
B1
800
150
CB
EB
CE
CE
CC
3.0
10
80
= 0.5 A, L = 50 mH
= 3 A, I
= 3 A, I
= 3 A
7
5
3
= 0.6 A, I
1 Ω
SJD00106BED
= 7 V, I
= 5 V, I
= 5 V, I
= 1 000 V, I
= 250 V
B
B
FE
= 0.6 A
= 0.6 A
C
C
C
B2
Conditions
Unit
= 0.5 A, f = 1 MHz
= 0
= 3 A
°C
°C
W
15 V
V
V
V
V
A
A
A
= −1.2 A
L
E
= 0
X
Y
G
1
15.0
11.0
10.9
Min
800
6
2
±0.3
±0.2
±0.5
3
5.45
1.1
Typ
2.0
6
φ 3.2
±0.3
±0.1
±0.2
±0.1
TOP-3F-A1 Package
Max
1.5
1.5
1.0
2.5
0.5
50
50
5.0
EIAJ: SC-92
1: Base
2: Collector
3: Emitter
±0.2
Unit: mm
0.6
(3.2)
MHz
Unit
2.0
µA
µA
±0.2
µs
µs
µs
V
V
V
±0.1
1

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C3507 Summary of contents

Page 1

... Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) V • Satisfactory linearity of forward current transfer ratio h • Full-pack package which can be installed to the heat sink with one screw ■ ...

Page 2

... 100 (1)T =Ta C (2)With a 100×100×2mm Al heat sink (1) (3)Without heat sink 80 (P =3W (2) ( 100 www.DataSheet4U.com Ambient temperature T  BE(sat) 100 =–25˚C C 100˚C 25˚C 0.1 0.01 0.01 0.1 1 Collector current I  ...

Page 3

... 1200 1600 (V) CE  (1)P =10V×0.3A(3W) and without heat sink T (2)P =10V×1.0A(10W) and with a 100×100×2mm Al heat sink T − Time t (s) SJD00106BED L T.U − CLAMP (1) ( 2SC3507 ...

Page 4

Request for your special attention and precautions in using the technical information (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and ...

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