HBD678 Hi-Sincerity Mocroelectronics, HBD678 Datasheet
HBD678
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HBD678 Summary of contents
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... HI-SINCERITY MICROELECTRONICS CORP. HBD678 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD678 is designed for use as output devices in complementary general purpose amplifier applications. Features High Current Gain Monolithic Constructor Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) ...
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HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension 3-Lead TO-126ML Plastic Package HSMC Package Code : D Inches DIM Min. Max. A 0.1356 0.1457 B 0.0170 0.0272 C 0.0344 0.0444 D 0.0501 ...