EMT1DXV6T5 ON Semiconductor, EMT1DXV6T5 Datasheet

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EMT1DXV6T5

Manufacturer Part Number
EMT1DXV6T5
Description
Dual General Purpose Transistor
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
EMT1DXV6T5G
Manufacturer:
ON
Quantity:
30 000
Part Number:
EMT1DXV6T5G
Manufacturer:
ON/安森美
Quantity:
20 000
EMT1DXV6T1,
EMT1DXV6T5
Dual General Purpose
Transistor
PNP Dual
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
This transistor is designed for general purpose amplifier
Lead−Free Solder Plating
Low V
These are Pb−Free Devices
Junction-to-Ambient
Junction-to-Ambient
Temperature Range
T
Derate above 25°C
T
Derate above 25°C
A
A
(Both Junctions Heated)
(One Junction Heated)
= 25°C
= 25°C
CE(SAT)
Characteristic
Characteristic
Rating
, t0.5 V
Symbol
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Value
−100
−6.0
Max
Max
−60
−50
357
350
500
250
2.9
4.0
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(3)
(4)
1
3T = Specific Device Code
M
G
MARKING DIAGRAM
http://onsemi.com
= Month Code
= Pb−Free Package
6
CASE 463A
1
SOT−563
STYLE 1
3T M G
(5)
Publication Order Number:
G
1
(2)
www.DataSheet4U.com
EMT1DXV6T1/D
(1)
(6)
Q
2

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EMT1DXV6T5 Summary of contents

Page 1

... EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications housed in the SOT−563 which is designed for low power surface mount applications. Features • Lead−Free Solder Plating • , t0.5 V Low V CE(SAT) • These are Pb−Free Devices ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Device EMT1DXV6T1 EMT1DXV6T1G EMT1DXV6T5 EMT1DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. EMT1DXV6T1, EMT1DXV6T5 (T = 25°C) A Symbol V (BR)CBO V (BR)CEO V ...

Page 3

... I , BASE CURRENT (mA) B Figure 3. Collector Saturation Region (V) EB Figure 5. Capacitance EMT1DXV6T1, EMT1DXV6T5 1000 300 mA 100 250 200 150 100 0.1 900 T = 25°C 800 A 700 600 500 400 300 200 100 ...

Page 4

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com EMT1DXV6T1, EMT1DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1 ...

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