PBSS302NZ Philips Semiconductors, PBSS302NZ Datasheet
PBSS302NZ
Related parts for PBSS302NZ
PBSS302NZ Summary of contents
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... PBSS302NZ 20 V, 5.8 A NPN low V Rev. 01 — 8 September 2006 1. Product profile 1.1 General description NPN low V small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...
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... Package Name Description SC-73 plastic surface-mounted package with increased heat sink; 4 leads Marking codes Marking code S302NZ Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat Min Max - 5.8 - 11.6 [ 0.7 [2] - 1.7 [ 150 65 +150 65 +150 ...
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... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NZ_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NZ_1 Product data sheet Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat 006aaa562 006aaa563 © ...
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... A Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat Min Typ = [1] = 0.5 A 300 ...
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... C Fig 6. Collector current as a function of 006aaa573 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat 14 IB (mA amb collector-emitter voltage; typical values 1 ...
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... Fig 10. Collector-emitter saturation voltage as a 006aaa577 10 R CEsat ( ) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat 1 1 (1) 2 (2) ( amb /I = 100 ...
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... Fig 14. Test circuit for switching times PBSS302NZ_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Boff Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...
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... For further information and the availability of packing methods, see PBSS302NZ_1 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3.3 1 2.3 4.6 Dimensions in mm Packing methods Package Description SOT223 8 mm pitch tape and reel Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat 1.8 1.5 4 1.1 0 0.8 0.32 0.6 0.22 04-11-10 [1] Packing quantity 1000 -115 Section 14. © ...
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... Fig 16. Reflow soldering footprint SOT223 (SC-73) Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS302NZ_1 Product data sheet 1. 7.40 1 solder lands occupied area solder paste solder resist 1 1. transport direction during soldering solder lands occupied area Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V CEsat 7.00 3.85 3.60 3.50 0.30 4 4.80 3. 5.90 6.15 Dimensions ...
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... Table 9. Revision history Document ID Release date PBSS302NZ_1 20060908 PBSS302NZ_1 Product data sheet 20 V, 5.8 A NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 8 September 2006 PBSS302NZ (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 8 September 2006 PBSS302NZ 20 V, 5.8 A NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 8 September 2006 Document identifier: PBSS302NZ_1 ...