PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 11

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PBSS303PD

Manufacturer Part Number
PBSS303PD
Description
3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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8. Test information
PBSS303PD_1
Product data sheet
Fig 14. BISS transistor switching time definition
Fig 15. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
V
CC
= 9.2 V; I
oscilloscope
t
d
t
C
on
= 2 A; I
V
Rev. 01 — 31 May 2006
t
I
r
(probe)
450
Bon
= 0.1 A; I
R1
R2
R
Boff
B
V
BB
= 0.1 A
60 V, 3 A PNP low V
R
C
V
CC
DUT
V
o
mgd624
(probe)
I
450
Bon
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
t
s
I
(100 %)
Boff
t
off
PBSS303PD
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
(BISS) transistor
t
f
www.DataSheet4U.com
I
006aaa266
C
(100 %)
11 of 16
t

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