PBSS306NX Philips Semiconductors, PBSS306NX Datasheet - Page 6

• Manufacturer Part Number: PBSS306NX
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS306NX_1
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 21 August 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4.5 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 80 V; I
= 80 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
100 V, 4.5 A NPN low V
B
B
B
B
B
B
B
B
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 200 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 50 mA
= 225 mA
= 0 A
= 0.5 A
= 1 A
= 2 A
= 4 A
= 5 A
= 2 A
= 0 A
= 0 A;
= i
C
= 100 mA;
= 3 A;
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
100
50
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS306NX
CEsat
Typ
-
-
-
330
270
175
85
70
27
53
100
115
160
140
170
40
0.81
0.94
0.78
15
315
330
240
290
530
110
23
(BISS) transistor
Max
100
50
100
-
-
-
-
-
40
75
150
160
225
200
245
56
0.9
1.05
0.85
-
-
-
-
-
-
-
40
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
6 of 15
A