PBSS3540E Philips Semiconductors, PBSS3540E Datasheet - Page 5

• Manufacturer Part Number: PBSS3540E
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
Table 7:
T
[1]
9397 750 15062
Product data sheet
Symbol
I
I
h
V
R
V
V
f
C
CBO
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
300 s;
0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
j
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 150 C
= 10 mA; I
= 100 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 5 V; I
= 40 V; I
= 40 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 10 V; I
C
C
C
C
C
C
Rev. 01 — 3 May 2005
B
E
E
E
= 0 A
= 10 mA
= 100 mA
= 500 mA
= 100 mA
= 100 mA;
B
B
B
B
B
= 0 A
= 0 A;
= 0.5 mA
= i
= 5 mA
= 10 mA
= 50 mA
= 50 mA
= 50 mA
e
= 0 A;
40 V, 500 mA PNP low V
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
40
-
-
-
-
-
-
-
100
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
440
-
-
300
-
PBSS3540E
CEsat
Max
-
-
-
700
-
10
(BISS) transistor
100
50
100
50
130
200
350
1.2
1.1
Unit
nA
nA
mV
mV
mV
mV
m
V
V
MHz
pF
A
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