PBSS4220V Philips Semiconductors, PBSS4220V Datasheet - Page 5

• Manufacturer Part Number: PBSS4220V
• Description: 2A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

w w w . D a t a S h e e t 4 U . c o m
Philips Semiconductors
7. Characteristics
PBSS4220V_1
Product data sheet
Table 7:
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
CEsat
BEsat
BEon
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
300 s;
Rev. 01 — 6 February 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
Boff
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 150 C
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 1 A; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA
= 20 V; I
= 20 V; I
= 20 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
Bon
C
= 50 mA
= 100 mA
= 100 mA
= 200 mA
= 100 mA
= 50 mA
= 100 mA
C
C
C
C
C
C
E
E
C
E
= 0 A
= 50 mA;
= 1 mA
= 100 mA
= 500 mA
= 1 A
= 2 A
= 1 A
BE
B
B
20 V, 2 A NPN low V
= 0 A
= 0 A;
= 50 mA;
= i
= 1 mA
= 50 mA
= 0 V
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
-
-
Min
-
-
220
220
220
200
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4220V
CEsat
Typ
-
-
-
-
480
440
410
360
220
35
70
145
140
275
270
140
0.95
1
0.8
9
29
38
200
40
240
210
11
(BISS) transistor
Max
0.1
50
0.1
0.1
-
-
-
-
-
55
95
180
175
355
350
175
1.1
1.2
1.1
-
-
-
-
-
-
-
-
Unit
mV
mV
mV
mV
mV
mV
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
5 of 13
A
A
A
A