PBSS4240DPN Philips Semiconductors, PBSS4240DPN Datasheet - Page 3

• Manufacturer Part Number: PBSS4240DPN
• Description: 40V low VCEsat NPN/PNP transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: duty cycle
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Operated under pulsed conditions: pulse width t
2003 Feb 20
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
V
V
V
I
I
I
I
I
P
T
T
T
Per device
P
Per transistor
R
SYMBOL
SYMBOL
C
CRP
CM
B
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
th j-a
40 V low V
footprint.
footprint.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to
ambient
NPN
PNP
CEsat
PARAMETER
PARAMETER
NPN/PNP transistor
open emitter
open base
open collector
note 1
single peak
T
T
T
T
in free air; note 1
in free air; note 2
p
amb
amb
amb
amb
20%; pulse width tp
10 ms; duty cycle
3
25 C; note 2
25 C; note 3
25 C; note 1
25 C; note 2
CONDITIONS
CONDITIONS
10 ms; mounting pad for collector standard
0.20; mounting pad for collector standard
65
65
MIN.
VALUE
340
110
PBSS4240DPN
40
40
5
1.35
2
3
300
1
370
310
1.1
+150
150
+150
600
Product specification
1.1
MAX.
UNIT
K/W
K/W
V
V
V
A
A
A
A
mA
A
mW
mW
W
mW
C
C
C
2
2
.
.
UNIT