PBSS4350S Philips Semiconductors, PBSS4350S Datasheet - Page 2

• Manufacturer Part Number: PBSS4350S
• Description: 50 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5350S.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2001 Nov 19
PBSS4350S
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High power dissipation (830 mW)
Ultra low collector-emitter saturation voltage
3 A continuous current
High current switching
Improved device reliability due to reduced heat
generation
Medium power switching and muting
Linear regulators
DC/DC convertor
Supply line switching circuits
Battery management applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
CBO
CEO
EBO
tot
50 V low V
TYPE NUMBER
CEsat
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SOT54 plastic package.
CEsat
PARAMETER
NPN transistor
MARKING CODE
S4350S
open emitter
open base
open collector
T
amb
2
25 C; note 1
CONDITIONS
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
Fig.1
PIN
1
2
3
Simplified outline (SOT54) and symbol.
1
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
collector
emitter
2
3
PARAMETER
65
65
DESCRIPTION
MIN.
Product specification
60
50
6
3
5
1
830
+150
150
+150
PBSS4350S
MAM259
MAX.
50
3
5
<145
MAX.
1
V
V
V
A
A
A
mW
C
C
C
UNIT
2
3
V
A
A
m
UNIT