PBSS4480X Philips Semiconductors, PBSS4480X Datasheet - Page 8

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PBSS4480X

Manufacturer Part Number
PBSS4480X
Description
80 V/ 4 A NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
2004 Oct 25
80 V, 4 A
NPN low V
V
V
(1) T
(2) T
(3) T
Fig.6
(1) I
(2) I
(3) I
Fig.8
(mV)
h
CEsat
CE
1000
FE
800
600
400
200
10
10
= 2 V.
10
C
C
C
0
1
10
amb
amb
amb
3
2
10
/I
/I
/I
B
B
B
= 100.
= 50.
= 10.
1
1
= 100 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
CEsat
10
10
(1)
(2)
(3)
(1)
(2)
(3)
(BISS) transistor
10
10
2
2
10
10
001aaa734
3
001aaa737
3
I
I
C
C
(mA)
(mA)
10
10
4
4
8
V
(1) T
(2) T
(3) T
Fig.7
I
(1) T
(2) T
(3) T
Fig.9
C
V
V
CE
(V)
/I
BE
CEsat
(V)
B
1.2
0.8
0.4
10
10
10
= 2 V.
= 20.
0
amb
amb
amb
amb
amb
amb
10
-1
-2
-3
1
10
-1
= 55 C.
= 25 C.
= 100 C.
-1
= 100 C.
= 25 C.
= 55 C.
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
(1)
(2)
(3)
10
10
2
(1)
(2)
(3)
2
PBSS4480X
Product specification
10
10
001aab057
3
001aaab059
I
C
3
I
C
(mA)
(mA)
10
10
4
4

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