PBSS4540Z Philips Semiconductors, PBSS4540Z Datasheet - Page 2

• Manufacturer Part Number: PBSS4540Z
• Description: NPN medium power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5540Z.
MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Aug 04
PBSS4540Z
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
High current (max. 10 A)
Low voltage (max. 40 V)
Low V
Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers
V
voltage IC applications
All battery driven equipment to save battery power.
CBO
CEO
EBO
tot
NPN medium power transistor
CEsat
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
TYPE NUMBER
CEsat
critical applications such as the latest low supply
CEsat
.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SOT223 plastic package.
PARAMETER
MARKING CODE
PB4540
open emitter
open base
open collector
T
amb
2
25 C; note 1
CONDITIONS
PINNING
handbook, halfpage
Fig.1 Simplified outline (SOT223) and symbol.
PIN
1
2
3
4
Top view
1
base
collector
emitter
collector
2
4
65
65
MIN.
3
DESCRIPTION
Preliminary specification
MAM287
40
40
6
5
10
2
1.35
+150
150
+150
PBSS4540Z
1
MAX.
2, 4
3
2
. For other
V
V
V
A
A
A
W
C
C
C
UNIT