PBSS5480X Philips Semiconductors, PBSS5480X Datasheet - Page 7

• Manufacturer Part Number: PBSS5480X
• Description: PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 08
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
80 V, 4 A
PNP low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 5 A; I
= 5 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 0.1 A; V
= 80 V; I
= 80 V; I
= 60 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
7
CONDITIONS
B
B
B
B
B
B
B
B
C
= 50 mA
= 40 mA
= 200 mA; note 1
= 500 mA; note 1
= 500 mA; note 1
= 50 mA
= 100 mA; note 1
= 400 mA; note 1
C
C
C
C
B
B
C
CE
E
E
E
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 4 A; note 1
= 2 A
BE
= 0 A
= 0 A; T
= i
= 10 V;
= 0 V
e
= 0 A;
j
= 150 C
200
180
150
80
100
MIN.
300
280
240
150
50
125
60
TYP.
35
70
170
220
250
770
810
810
930
760
PBSS5480X
Product specification
75
90
MAX.
100
50
100
100
55
105
250
340
380
850
900
900
1000 mV
850
nA
nA
nA
mV
mV
mV
mV
mV
m
mV
mV
mV
mV
MHz
pF
UNIT
A