PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 6

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Table 7:
T
[1]
9397 750 12567
Product data sheet
Symbol
V
R
V
V
f
C
T
j
Fig 4. DC current gain as a function of collector
CEsat
BEsat
BEon
CEsat
c
= 25 C unless otherwise specified.
Pulse test: t
(1) T
(2) T
(3) T
h
FE
600
400
200
0
10
V
current; typical values.
amb
amb
amb
CE
1
Characteristics
= 10 V.
Parameter
collector-emitter
saturation voltage
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
= 100 C.
= 25 C.
= 55 C.
p
300 s;
1
10
0.02.
(1)
(2)
(3)
…continued
10
2
Conditions
I
I
I
I
I
V
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
10
= 10 V; I
= 10 V; I
= 10 V; I
001aaa497
3
I
C
(mA)
B
B
B
= 100 mA
= 100 mA
= 100 mA
10
C
C
E
B
B
Rev. 01 — 2 June 2004
4
= I
= 1 A
= 50 mA;
= 10 mA
= 50 mA
e
= 0 A;
Fig 5. Base-emitter voltage as a function of collector
(mV)
(1) T
(2) T
(3) T
V
1000
BE
800
600
400
200
[1]
10
V
current; typical values.
amb
amb
amb
CE
100 V, 1 A NPN low V
1
= 10 V.
= 55 C.
= 25 C.
= 100 C.
Min
-
-
-
-
-
-
100
-
1
10
Typ
-
-
-
160
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
(1)
(2)
(3)
10
PBSS8110Y
2
CEsat
Max
40
120
200
200
1.05
0.9
-
7.5
10
(BISS) transistor
001aaa495
3
I
C
(mA)
10
Unit
mV
mV
mV
m
V
V
MHz
pF
4
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