MBT35200 ON Semiconductor, MBT35200 Datasheet

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MBT35200

Manufacturer Part Number
MBT35200
Description
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
Manufacturer
ON Semiconductor
Datasheet

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A Device of the m X
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
August, 2000 – Rev. 1
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Collector Current — Peak
Electrostatic Discharge
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Thermal Resistance,
Total Device Dissipation
Junction and Storage
Semiconductor Components Industries, LLC, 2000
T
Derate above 25 C
Junction to Ambient
T
Derate above 25 C
Junction to Ambient
Junction to Lead #1
(Single Pulse < 10 sec.)
Temperature Range
A
A
= 25 C
= 25 C
Characteristic
Rating
(T
A
= 25 C)
(Notes 2. & 3.)
R
R
Family
P
P
D
D
JA
JA
Symbol
Symbol
P
T
V
V
V
(Note 1.)
(Note 2.)
ESD
R
Dsingle
J
I
(Note 1.)
(Note 2.)
CEO
CBO
, T
EBO
CM
I
C
JL
stg
–55 to
+150
Max
–5.0
–2.0
–5.0
Max
1.75
–35
–55
625
200
120
5.0
1.0
8.0
HBM Class 3
80
MM Class C
1
mW/ C
mW/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
C/W
C/W
C/W
W
W
A
C
MBT35200MT1
Device
ORDERING INFORMATION
PNP TRANSISTOR
DEVICE MARKING
http://onsemi.com
35 VOLTS
2.0 AMPS
G4 (date code)
Case 318G
4
CASE 318G
Package
STYLE 6
5
TSOP
6
Publication Order Number:
3
2
1
3000/Tape & Reel
MBT35200MT1/D
Shipping

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MBT35200 Summary of contents

Page 1

... C C 1.75 W Dsingle – stg +150 1 http://onsemi.com 35 VOLTS 2.0 AMPS PNP TRANSISTOR CASE 318G TSOP STYLE 6 DEVICE MARKING G4 (date code) ORDERING INFORMATION Device Package Shipping MBT35200MT1 Case 318G 3000/Tape & Reel Publication Order Number: MBT35200MT1/D ...

Page 2

... Output Capacitance (V = –3 1.0 MHz) CB Turn–on Time (V = – –100 mA Turn–off Time (V = – –100 mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle MBT35200MT1 ( unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I CES I ...

Page 3

... Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 3. DC Current Gain versus Collector Current Figure 5. Base Emitter Turn–On Voltage versus Collector Current MBT35200MT1 Figure 2. Collector Emitter Saturation Voltage versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi ...

Page 4

... MBT35200MT1 Figure 7. Output Capacitance Figure 9. Normalized Thermal Response http://onsemi.com Figure 8. Safe Operating Area 4 m ...

Page 5

... Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MBT35200MT1 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ...

Page 6

... MBT35200MT1 PACKAGE DIMENSIONS CASE 318G–02 ISSUE http://onsemi.com ...

Page 7

... Notes MBT35200MT1 http://onsemi.com 7 ...

Page 8

... Email: ONlit–asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MBT35200MT1/D ...

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