DMBT1815 Dc Components, DMBT1815 Datasheet
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DMBT1815
Manufacturer Part Number
DMBT1815
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT1815.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
Designed for use in driver stage of AF amplifier and
general purpose amplification.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Range
Rank
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
120~240
DC COMPONENTS CO., LTD.
FE1
Y
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
200~400
Symbol
V
V
V
A
T
=25
P
CBO
CEO
EBO
T
STG
G
I
Symbol
C
V
V
D
BV
BV
BV
J
I
CE(sat)
h
h
I
BE(sat)
C
CBO
EBO
o
FE1
FE2
f
CBO
CEO
EBO
T
ob
C)
-55 to +150
Rating
+150
150
225
Min
120
60
50
60
50
25
80
350~700
5
5
-
-
-
-
-
B
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
0.25
100
100
700
3.5
1
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
nA
nA
pF
V
V
V
V
V
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
I
I
I
V
V
I
I
I
I
I
V
.063(1.60)
.055(1.40)
C
C
E
C
C
C
C
C
CB
EB
CB
=10 A
=100 A
=1mA
=100mA, I
=100mA, I
=2mA, V
=150mA, V
=1mA, V
.051(1.30)
.035(0.90)
Max
=5V
=60V
=10V, f=1MHz
Test Conditions
.108(0.65)
.089(0.25)
DMBT1815
CE
CE
B
B
=6V
=10V, f=100MHz
CE
=10mA
=10mA
.027(0.67)
.013(0.32)
=6V
.0043(0.11)
.0035(0.09)
SOT-23