DMBTA13 Dc Components, DMBTA13 Datasheet
DMBTA13
Manufacturer Part Number
DMBTA13
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBTA13.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for applications requiring high current gain.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Characteristic
Characteristic
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
T
CES
EBO
I
STG
Symbol
C
D
V
J
BV
BV
V
BV
I
h
h
I
CE(sat)
BE(on)
C
CBO
EBO
FE1
FE2
o
f
CBO
CES
EBO
T
ob
C)
-55 to +150
Rating
+150
300
225
Min
10K
125
30
30
10
5K
30
30
10
-
-
-
-
-
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
100
100
1.5
2
6
-
-
-
-
-
-
1
.118(3.00)
.110(2.80)
.091(2.30)
.067(1.70)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
nA
nA
pF
V
V
V
V
V
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
.063(1.60)
.055(1.40)
I
I
I
V
V
I
I
I
I
I
V
C
C
E
C
C
C
C
C
.051(1.30)
.035(0.90)
Max
CB
EB
CB
=100 A
=100 A
=10 A
=100mA, I
=100mA, V
=10mA, V
=100mA, V
=10mA, V
=30V
=10V
=10V, f=1MHz
Test Conditions
.108(0.65)
.089(0.25)
DMBTA13
CE
CE
B
CE
CE
=0.1mA
.027(0.67)
.013(0.32)
=5V
=5V, f=100MHz
=5V
=5V
.0035(0.09)
SOT-23
.0043(0.11)
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