DIM200PKM33-A000 Dynex Semiconductor, DIM200PKM33-A000 Datasheet - Page 2

• Manufacturer Part Number: DIM200PKM33-A000
• Description: Igbt Modules - Chopper
• Manufacturer: Dynex Semiconductor

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DIM200PKM33-A000
ABSOLUTE MAXIMUM RATINGS - IGBT ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index): 175
case
2/6
Symbol
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
= 25˚C unless stated otherwise
V
V
I
P
V
Q
T
C(PK)
th(c-h)
th(j-c)
th(j-c)
T
I
CES
GES
-
max
isol
stg
C
PD
j
Thermal resistance - transistor (IGBT arm)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (diode arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage - per module
Partial discharge - per module
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
AlN
AlSiC
33mm
20mm
Parameter
V
T
1ms, T
T
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
= 0V
= 85˚C
= 25˚C, T
case
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting - M6
Electrical connections - M5
= 115˚C
1
= 2450V, V
j
= 150˚C
Test Conditions
Test Conditions
2
= 1800V, 50Hz RMS
-
-
Min.
–40
-
-
-
-
-
-
-
-
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Typ.
-
-
-
-
-
-
-
-
-
Max.
Max.
3300
2608
6000
150
125
125
200
400
48
96
96
16
10
5
4
20
˚C/kW
˚C/kW
˚C/kW
˚C/kW
Units
Units
Nm
Nm
pC
˚C
˚C
˚C
W
V
V
A
A
V