DIM200PLM33-A000 Dynex Semiconductor, DIM200PLM33-A000 Datasheet - Page 3

• Manufacturer Part Number: DIM200PLM33-A000
• Description: Igbt Modules - Chopper
• Manufacturer: Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
Note:
†
L* is the circuit inductance + L
case
Measured at the power busbars and not the auxiliary terminals)
Symbol
V
V
SC
= 25˚C unless stated otherwise.
CE(sat)
R
I
I
C
C
GE(TH)
V
I
L
CES
GES
I
FM
INT
F
res
F
ies
M
Data
†
†
Collector cut-off current
(IGBT arm)
Gate leakage current (IGBT arm)
Gate threshold voltage (IGBT arm)
Collector-emitter saturation voltage
(IGBT arm)
Diode forward current (IGBT arm)
Diode forward current (diode arm)
Diode maximum forward current
(IGBT arm)
Diode maximum forward current
(diode arm)
Diode forward voltage
Input capacitance (IGBT arm)
Reverse transfer capacitance (IGBT arm)
Module inductance - per switch
Internal transistor resistance (IGBT arm)
Short circuit. I
SC
Parameter
M
V
V
V
I
V
V
DC
DC
t
t
I
I
I
I
V
V
T
t
IEC 60747-9
p
C
p
p
F
F
F
F
j
GE
GE
GE
GE
GE
CE
CE
= 1ms
= 1ms
= 200A (IGBT arm)
= 200A (Diode arm)
= 200A, T
= 200A, T
= 125˚C, V
=20mA, V
10 s, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
= 25V, V
= 25V, V
Test Conditions
CE(max)
CE
CE
CC
C
C
case
case
GE
GE
GE
= 200A
= 200A, , T
= V
= V
CE
= 2500V,
= V
= 125˚C (IGBT arm)
= 125˚C (diode arm)
= 0V, f = 1MHz
= 0V, f = 1MHz
= V
= 0V
CES
CES
CE
CES
-
-
, T
– L*. di/dt
case
case
= 125˚C
= 125˚C
I
I
1
2
DIM200PLM33-A000
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1300
1100
Typ.
0.54
200
200
400
400
5.5
3.2
4.0
2.5
2.5
2.5
2.5
2.5
45
30
-
-
-
Max.
6.5
15
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
m
mA
mA
nF
nF
nH
V
V
V
A
A
A
A
V
V
V
V
A
A
A
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