DIM200WKS12-A000 Dynex Semiconductor, DIM200WKS12-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM200WKS12-A000
• Description: IGBT Chopper Module - Upper Arm Control
• Manufacturer: Dynex Semiconductor

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DIM200WKS12-A000
6/8
Fig. 9 Diode reverse bias safe operating area - IGBT and
300
250
200
150
100
400
350
300
250
200
150
100
50
50
0
0
0.5
0
T
Fig. 7 Diode typical forward characteristics
V
and not the auxiliary terminals
case
F
is measured at power busbars
200
=125˚C
1.0
T
T
j
j
= 25˚C
= 125˚C
400
1.5
Reverse voltage, V
Forward voltage, V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
diode arm
600
2.0
800
2.5
R
F
- (V)
- (V)
1000
3.0
1200
3.5
1400
4.0
1000
450
400
350
300
250
200
150
100
100
50
10
0.001
0
1
0
Module I
Chip I
T
V
R
case
ge
g
= 4.7 Ohms
Fig. 8 Reverse bias safe operating area
= 15V
Fig. 10 Transient thermal impedance
= 125˚C
200
C
IGBT
Diode
C
Collector emitter voltage, V
0.01
400
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
Pulse width, t
600
0.1
2.10
0.11
4.49
0.10
1
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800
p
- (s)
11.62
25.28
3.14
3.21
2
ce
1000
- (V)
43.85
45.60
74.24
38.58
1
3
1200
Transistor
Diode
143.02
113.97
29.53
90.03
4
1400
10