DIM250WHS06-S000 Dynex Semiconductor, DIM250WHS06-S000 Datasheet
DIM250WHS06-S000
Related parts for DIM250WHS06-S000
DIM250WHS06-S000 Summary of contents
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... The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM250WHS06-S000 is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion ...
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... DIM250WHS06-S000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... 10mA 15V 250A 15V 250A 125˚ case 1ms 250A 250A 125˚C F case V = 25V 0V 1MHz DIM250WHS06-S000 Min. Typ. Max. Units - - 4.5 5.5 7 2.1 2 2.3 2 250 500 A - 1.5 1 ...
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... DIM250WHS06-S000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF Turn-on delay time t d(on) Rise time t r Turn-on energy loss Gate charge g Q Diode reverse recovery charge rr I Diode reverse current ...
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... T E case off V = 300V rec I = 250A 200 250 300 - (A) C Fig.5 Typical switching energy vs gate resistance DIM250WHS06-S000 = 125˚C is measured at power 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage (V) ce Fig.4 Typical output characteristics = 125º ...
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... DIM250WHS06-S000 500 V is measured at power busbars F and not the auxiliary terminals 450 T = 25˚C j 400 T = 125˚C j 350 300 250 200 150 100 0.5 1.0 1.5 Foward voltage, V Fig.6 Diode typical forward characteristics 200 T = 125˚C j 180 160 140 120 100 ...
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... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7 6(G ) 1(E1C2) 2(E2) Nominal weight: 420g Module outline type code: W Fig. 15 Package details DIM250WHS06-S000 3(C1 5(E ) 7/8 ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...