DIM400DCM17-A000 Dynex, DIM400DCM17-A000 Datasheet
DIM400DCM17-A000
Related parts for DIM400DCM17-A000
DIM400DCM17-A000 Summary of contents
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... The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400DCM17-A000 is a 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications ...
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... DIM400DCM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400DCM17-A000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM400DCM17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V † Collector-emitter saturation voltage CE(sat) I Diode forward current F Diode maximum forward current I FM † Diode forward voltage (IGBT arm) ...
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... Test Conditions I = 400A 15V 900V 4.7 G(ON) G(OFF 100nH Diode arm I = 400A, F IGBT arm CES Diode arm dI /dt = 2000A IGBT arm Diode arm IGBT arm DIM400DCM17-A000 Min. Typ. Max. Units - 1150 - ns - 100 - ns - 120 - mJ - 250 - ns - 250 - ns - 150 - ...
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... DIM400DCM17-A000 ELECTRICAL CHARACTERISTICS T = 125˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse recovery current ...
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... I = 400A 300 200 100 E off rec 0 0 400 500 - (A) C Fig. 6 Typical switching energy vs gate resistance DIM400DCM17-A000 = 125˚C is measured at power busbars V = 20V GE 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics = 900V = 125° ...
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... DIM400DCM17-A000 800 Arm 3- 25˚C j Arm 3- 125˚C j 700 Arm 2- 25˚C j Arm 2- 125˚ measured at power busbars F 600 and not the auxiliary terminals 500 400 300 200 100 0 0 2.0 0.5 1.0 1.5 Forward voltage, V Fig. 7 Diode typical forward characteristics 550 Freewheel Diode ...
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... Fig current rating vs case temperature DIM400DCM17-A000 Antiparallel Diode 100 120 Case temperature (˚C) case 140 160 9/11 ...
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... DIM400DCM17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Nominal weight: 1050g Module outine type code: D ...
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... North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5490-2 Issue No. 2.0 March 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM DIM400DCM17-A000 11/11 ...