DIM400GDM33-A000 Dynex, DIM400GDM33-A000 Datasheet
DIM400GDM33-A000
Related parts for DIM400GDM33-A000
DIM400GDM33-A000 Summary of contents
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... The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400GDM33-A000 is a dual switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM400GDM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM400GDM33-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V Diode forward voltage F Input capacitance C ies ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse recovery current rr Diode reverse recovery energy E rec Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400GDM33-A000 Test Conditions Min 400A - 15V - 1800V - CE ...
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... DIM400GDM33-A000 TYPICAL CHARACTERISTICS 800 Common emitter 25˚C case 700 600 500 400 300 200 100 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics 900 Conditions 125˚C case 800 R = 4.7 Ohms 1800V 68nF ge 700 600 500 400 300 ...
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... F Fig. 8 Reverse bias safe operating area 1000 100 125˚ 2500 3000 3500 1 - (V) R Fig. 10 Forward bias safe operating area DIM400GDM33-A000 500 1000 1500 2000 2500 3000 Collector emitter voltage ( c(max) = 80˚ 100 1000 Collector emitter voltage, V ...
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... DIM400GDM33-A000 100 10 1 0.1 0.001 0.01 0.1 Pulse width Fig. 11 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Diode Transistor (s) Fig current rating vs case temperature www.dynexsemi.com ...
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... DO NOT SCALE Aux Emitter Aux Collector Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 140 160 Nominal weight: 1000g Module outline type code: G DIM400GDM33-A000 9/10 ...
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... DIM400GDM33-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...