DIM600DDM17-A000 Dynex Semiconductor, DIM600DDM17-A000 Datasheet

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DIM600DDM17-A000

Manufacturer Part Number
DIM600DDM17-A000
Description
Dual Switch IGBT Module
Manufacturer
Dynex Semiconductor
Datasheet
www.DataSheet4U.com
FEATURES
APPLICATIONS
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM600DDM17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10 s short circuit withstand. This module is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600DDM17-A000
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated AlSiC Baseplate with AlN Substrates
High Thermal Cycling Capability
High Power Inverters
Motor Controllers
.
KEY PARAMETERS
V
V
I
I
*
(measured at the power busbars and not the auxiliary terminals)
C
C(PK)
CES
CE (sat)
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
*
Fig. 1 Dual switch circuit diagram
DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 September 2005
(typ)
(max)
(max)
Outline type code: D
1700V
2.7V
600A
1200A
(LN24180)
1
/
9

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DIM600DDM17-A000 Summary of contents

Page 1

... The DIM600DDM17-A000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...

Page 2

... C case T = 25° 150° C case 10ms 125° Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287 1800V 1300V RSM 1 2 DIM600DDM17-A000 Max. Units 1700 V ±20 V 600 A 1200 A 5200 W 2 120 kA S 4000 V 10 ...

Page 3

... AlN AlSiC 20mm 10mm 175 Parameter Test Conditions Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting – M6 Electrical connections – M4 Electrical connections – M8 DIM600DDM17-A000 Min. Typ. Max 150 - - 125 ...

Page 4

... 1ms 600A 600A 125° case V = 25V 0V 1MHz 125° 1000V 10µ L*×di/dt CE(max) CES IEC 60747-9 M DIM600DDM17-A000 Min. Typ 125° case - - 4.5 5.5 - 2.7 = 125° 3.4 case - - - - - 2 3 2780 ...

Page 5

... /dt = 3000A/µ Test Conditions Min 600A - ±15V - 900V - 3.3 - G(ON) G(OFF 100nH - I = 600A 900V /dt = 3000A/µ DIM600DDM17-A000 Typ. Max. Units 1200 - ns 140 - ns 190 - mJ 250 - ns 250 - ns 220 - mJ 6.8 - µC 150 - µC 350 - A 100 - mJ Typ. Max. Units 1500 - ns 170 - ...

Page 6

... SEMICONDUCTOR Fig.3 Typical output characteristics Fig.5 Typical switching energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com DIM600DDM17-A000 Fig.4 Typical output characteristics Fig.6 Typical switching energy vs gate resistance ...

Page 7

... Z(t) IGBT Z(t) Antiparallel Diode 10 1 0.001 0.01 0.1 Pulse width IGBT °C/kW 0.584 3.229 i IGBT ms 0.109 3.136 i Ri DIODE °C/kW 0.935 5.266 DIODE ms 0.099 3.206 i Fig.10 Transient thermal impedance DIM600DDM17-A000 ( 12.180 8.202 45.600 143.022 15.467 18.757 38.583 113.969 ...

Page 8

... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com Nominal weight: 1600 gms Module outline type code: D DIM600DDM17-A000 ...

Page 9

... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020  Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. DIM600DDM17-A000 ...

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