DIM800NSM33-A000 Dynex, DIM800NSM33-A000 Datasheet
DIM800NSM33-A000
Related parts for DIM800NSM33-A000
DIM800NSM33-A000 Summary of contents
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... The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800NSM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM800NSM33-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800NSM33-A000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM800NSM33-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V Diode forward voltage F Input capacitance C ies ...
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... Turn-on energy loss E ON Diode reverse recovery charge Diode reverse recovery current rr E Diode reverse recovery energy rec Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800NSM33-A000 Test Conditions Min 800A - 15V - 1800V - ...
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... DIM800NSM33-A000 TYPICAL CHARACTERISTICS 1600 Common emitter 25˚C case 1400 1200 1000 800 600 400 200 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics 1400 Conditions 125˚C case R = 2.2 Ohms g 1200 V = 1800V 150nF ge 1000 800 600 400 200 0 0 200 ...
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... F Fig. 8 Reverse bias safe operating area 10000 1000 100 125˚ 2500 3000 3500 1 - (V) R DIM800NSM33-A000 500 1000 1500 2000 2500 3000 Collector emitter voltage ( C(max) = 80˚ 100 1000 Collector emitter voltage (V) ce Fig. 10 Forward bias safe operating area ...
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... DIM800NSM33-A000 100 10 1 0.1 0.001 0.01 0.1 Pulse width Fig. 11 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Diode Transistor (s) Fig current rating vs case temperature www.dynexsemi.com ...
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... Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 45 140 Nominal weight: 1050g Module outline type code: N DIM800NSM33-A000 6x Ø7 9/10 ...
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... DIM800NSM33-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. ...