NUS1204MN ON Semiconductor, NUS1204MN Datasheet

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NUS1204MN

Manufacturer Part Number
NUS1204MN
Description
Overvoltage Protection IC
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NUS1204MNT1G
Manufacturer:
SIRENZA
Quantity:
500
www.DataSheet4U.com
NUS1204MN
Overvoltage Protection IC
with Integrated MOSFET
combining the NCP304 overvoltage protection circuit (OVP) with a
−12 V P−Channel power MOSFET. It is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
adapter or a car accessory charger to power a portable product or
recharge its internal batteries. It has a nominal overvoltage threshold
of 4.725 V which makes it ideal for single cell Li−Ion as well as 3/4
cell NiCD/NiMH applications.
Features
Benefits
Applications
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
This device represents a new level of safety and integration by
The OVP IC is optimized for applications using an external AC−DC
Applications
OvervoltageTurn−Off Time of Less Than 20 ms
Accurate Voltage Threshold of 4.725 V, Nominal
High Accuracy Undervoltage Threshold of 2.0%
−12 V Integrated P−Channel Power MOSFET
Low R
Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable
Maximum Solder Reflow Temperature @ 260°C
This device is manufactured with a Pb−Free external lead finish only.
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
DS(on)
= 75 mW @ −4.725 V
†For information on tape and reel specifications,
NUS1204MNT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
GATE
GND
OUT
Device
ORDERING INFORMATION
U2 = Specific Device Code
M
G
1
2
3
PIN CONNECTIONS
http://onsemi.com
= Date Code
= Pb−Free Package
CASE 506AN
WDFN6
(Top View)
(Pb−Free)
Package
WDFN6
8
7
Publication Order Number:
3000 Tape & Reel
MARKING
DIAGRAM
1
2
3
NUS1204MN/D
6
5
4
Shipping
U2 M
DRAIN
SOURCE
IN
G
6
5
4

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NUS1204MN Summary of contents

Page 1

... View) ORDERING INFORMATION Device Package Shipping NUS1204MNT1G WDFN6 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUS1204MN † ...

Page 2

... IN pin and the adapter. 5 SOURCE Source pin of the P−Channel Power MOSFET 6, 8 DRAIN Drain pin of the P−Channel Power MOSFET OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE IN <V th >V th NUS1204MN SOURCE P−CH + − V ref GND Figure 1. Simplified Schematic Pin Description , thus disconnecting the P−Channel Power MOSFET. IN OUT ...

Page 3

... Source Output Voltage Low (Input < 4 mA; CNTRL = 0 V) Sink Propagation Delay Input to Output Complementary Output NCP304 Series Output Transition, High to Low Output Transition, Low to High 3. Guaranteed by design. NUS1204MN Pin 2 4 − OVP IC − P−Channel FET − − − 2,3,4 = 25°C (Note 1) ...

Page 4

... Gate to Source Leakage Current Drain to Source Breakdown Voltage = −250 Gate Threshold Voltage = −250 Switching characteristics are independent of operating junction temperature. NUS1204MN Symbol Min R DS(on) I DSS off GSS V (BR)DSS −12 V (GS)th −0.4 http://onsemi ...

Page 5

... PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.70 0.80 A1 0.00 0.05 A3 0.20 REF b 0.25 0.35 D 2.00 BSC D2 0.57 0.77 2.00 BSC E E2 0.90 1.10 e 0.65 BSC K 0.25 REF L 0.20 0.30 J 0.15 REF SOLDERMASK DEFINED MOUNTING FOOTPRINT 2.30 1 1.05 DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS1204MN/D 6X 0.35 0.65 PITCH ...

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