NUS3045MN ON Semiconductor, NUS3045MN Datasheet - Page 3

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NUS3045MN

Manufacturer Part Number
NUS3045MN
Description
(NUS2045MN / NUS3045MN) Overvoltage Protection IC
Manufacturer
ON Semiconductor
Datasheet

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
MAXIMUM RATINGS
OUT Voltage to GND
Input and CNTRL Pin Voltage to GND
V
Maximum Power Dissipation (Note 1)
Thermal Resistance Junction−to−Air (Note 1)
Junction Temperature
Operating Ambient Temperature
V
Storage Temperature Range
ESD Performance (HBM) (Note 2)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current, Steady State, T
CC
CNTRL
Maximum Range
Operating Voltage
(T
A
= 25°C unless otherwise stated)
Rating
A
= 25°C (Note 1)
NUS2045MN, NUS3045MN
P−Channel FET
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
NUS2045MN
NUS3045MN
http://onsemi.com
OVP IC
3
1,2,3,7,8,10
Pin
7
1
3
8
3
V
Symbol
V
CC(max)
V
V
R
CNTRL
V
T
V
P
input
T
T
DSS
I
θJA
stg
GS
D
A
O
D
J
−0.3
−0.3
−0.3
−0.3
Min
−40
−65
−20
2.5
−8
0
108.6
104.3
Max
−1.0
−1.0
150
150
−20
−30
1.0
5.0
30
30
13
30
85
20
8
°C/W
Unit
kV
°C
°C
°C
W
V
V
V
V
V
V
A

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