DNB63 Dynex Semiconductor, DNB63 Datasheet - Page 4
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DNB63
Manufacturer Part Number
DNB63
Description
Rectifier Diode
Manufacturer
Dynex Semiconductor
Datasheet
1.DNB63.pdf
(7 pages)
CURVES
V
V
DNB63
4/7
CHARACTERISTICS
FM
FM
10000
Symbol
8000
6000
4000
2000
Equation:-
= A + Bln (I
I
V
V
Q
I
RRM
r
RM
t
0.5
FM
T
0
rr
TO
S
Fig.2 Maximum (limit) forward characteristics
Forward voltage
Peak reverse current
Total stored charge
Peak recovery current
Reverse recovery time
Slope resistance
Threshold voltage
F
) + C.I
Instantaneous forward voltage, V
F
+D. I
1.0
T
j
F
= 190˚C
Parameter
Measured under pulse
conditions
1.5
F
- (V)
2.0
I
T
At T
At 3000A peak, T
At V
At T
F
case
= 1000A, dI
vj
vj
RRM
= 175˚C, V
= 190˚C
= 190˚C
Where
these values are valid for T
, T
10000
8000
6000
4000
2000
case
0
= 190
0
RR
/dt = 50A/ s
R
Conditions
= 100V
case
o
C
A = 0.517184
B = 0.035583
C = 4.94 x 10
D = –0.0011
= 25
2000
o
Fig.3 Dissipation curves
Mean forward current, I
C
j
–5
= 125˚C for I
6 phase
4000
www.dynexsemi.com
3 phase
F(AV)
F
Min.
500A to 10000A
-
-
-
-
-
-
-
- (A)
6000
Half wave
0.046
Max.
4000
1.05
0.75
600
20
60
Units
dc
8000
mA
m
V
A
V
C
s