DNLS160V Diodes, DNLS160V Datasheet - Page 2

• Manufacturer Part Number: DNLS160V
• Description: LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
• Manufacturer: Diodes

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Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DS31248 Rev. 3 - 2
250
300
200
150
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
50
0
0
Characteristic
25
Fig. 1 Maximum Power Dissipation vs.
T , AMBIENT TEMPERATURE (°C)
A
Ambient Temperature
50
75
@T
A
100
= 25°C unless otherwise specified
125
V
V
V
V
R
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
h
CBO
CES
EBO
t
t
f
on
t
off
t
FE
obo
t
t
150
T
d
s
r
f
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Min
250
200
100
150
80
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
0.91
0.81
Typ
320
280
165
140
140
270
300
220
⎯
⎯
⎯
⎯
⎯
⎯
80
80
90
17
73
80
7
Max
100
100
100
110
140
250
250
1.1
0.9
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
Fig. 2 Typical Collector Current vs.
Unit
mΩ
mV
nA
μA
nA
nA
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
Collector-Emitter Voltage
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
CC
= 100μA, I
= 1A, I
= 1A, I
= 1A, I
= 100μA, I
= 10mA, I
= 100mA, I
= 500mA, I
= 0.5A, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 60V, I
= 60V, I
= 60V, V
= 10V, f = 1.0MHz
= 10V, I
= 10V
B
B
B
= 100mA
= 100mA
= 50mA
C
C
C
C
C
B1
Test Condition
B
E
E
C
= 0
E
C
= 1mA
= 500mA
= 1A
= 1A
BE
B
B
= I
= 0
= 0
= 0, T
= 50mA, f = 100MHz
= 0
= 0
= 1mA
= 50mA
= 0
B2
= 25mA
A
= 150°C
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DNLS160V