ZX5T849G Zetex Semiconductors, ZX5T849G Datasheet - Page 4

• Manufacturer Part Number: ZX5T849G
• Description: 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZX5T849G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
100
100
100
80
80
30
20
7
1025
TYP.
125
125
920
175
140
100
185
200
150
425
8.1
40
25
48
37
35
50
30
2%.
MAX. UNIT CONDITIONS
1130
1000
125
220
300
0.5
0.5
20
20
10
35
50
65
MHz I
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
ISSUE 1 - NOVEMBER 2003
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=1A, I
=2A, I
=6.5A, I
=1A, V
=7A, V
=20A, V
=100 A
=1 A, RB 1k
=10mA*
=100 A
=0.5A, I
=6.5A, I
=6.5A, V
=10mA, V
=100mA, V
=1A, V
=-I
=70V, T
=70V, T
=6V
=70V
=70V
=10V, f=1MHz*
B2
B
B
B
=100mA
CE
CE
=100mA*
=20mA*
=20mA*
CC
B
CE
amb
amb
B
=300mA*
B
=1V*
=1V*
CE
=20mA*
=300mA*
=10V,
=1V*
CE
CE
=1V*
=100 C
=100 C
=1V*
=10V