BD130 Comset Semiconductors, BD130 Datasheet
BD130
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BD130 Summary of contents
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... BD130 POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO- 3 metal case intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol V Collector-Emitter Voltage CEO V Collector-Base Voltage ...
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... BD130 THERMAL CHARACTERISTICS Symbol R Thermal Resistance, Junction to Case thJ-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter V CEO(BR) Breakdown Voltage (*) Collector-Emitter Saturation V CE(SAT) Voltage (*) Collector-Emitter Cutoff I Current CEX Emitter-Base Cutoff Current I EBO Base-Emitter Voltage (*) Transition Frequency T COMSET SEMICONDUCTORS Ratings ...
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... BD130 Symbol Ratings Static Forward Current h 21E Transfer Ratio (*) (*) Pulse Width 300 s, Duty Cycle (1) collector-Emitter voltage limited et V MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0, 0,04 P 4,06 0,16 Pin 1 : Base Pin 2 : Collector Case : Emitter COMSET SEMICONDUCTORS Test Condition( ...