BD179-10 ON Semiconductor, BD179-10 Datasheet - Page 2

• Manufacturer Part Number: BD179-10
• Description: POWER TRANSISTORS NPN SILICON
• Manufacturer: ON Semiconductor

BD179 BD179-10
2
1000
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
700
500
300
200
100
10
70
50
30
20
10
2.0
1.0
0.07
0.05
0.03
0.02
0.01
1.0
0.8
0.6
0.4
0.2
1.0
0.7
0.5
0.3
0.2
0.1
Figure 1. Active Region Safe Operating Area
0
3.0 5.0
0.01
T J = 150 C
0.2
2.0
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
D = 0.05
D = 0.01
D = 0.5
D = 0.2
D = 0.1
T J = + 150 C
0.02 0.03 0.05
T J = + 25 C
T J = + 55 C
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASE–EMITTER DISSIPATION IS
SIGNIFICANT ABOVE I C = 2.0 AMP)
PULSE DUTY CYCLE < 10%
0.3
3.0
10
I C , COLLECTOR CURRENT (mA)
Figure 3. Current Gain
5.0 7.0 10
20 30
0.5
I C = 0.1 A
50
0.1
100
dc
1.0
20
0.2 0.3
200
5.0 ms
300 500
30
1.0 ms
V CE = 2.0 V
2.0
Figure 2. Collector Saturation Region
0.5
100 s
50
SINGLE PULSE
0.25 A
1000
Figure 5. Thermal Response
70
3.0
1.0
t, TIME or PULSE WIDTH (ms)
2000
100
I B , BASE CURRENT (mA)
2.0 3.0
5.0
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum T J , power–temperature
derating must be observed for both steady state and pulse
power conditions.
The Safe Operating Area Curves indicate I C – V CE limits
1.5
1.2
0.9
0.6
0.3
0.5 A
5.0
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) JC (t)
0
2.0
JC (t) = r(t) JC
JC = 4.16 C/W MAX
JC = 3.5 C/W TYP
10
Motorola Bipolar Power Transistor Device Data
3.0 5.0
T J = 25 C
10
V BE(sat) @ I C /I B = 10
V CE(sat) @ I C /I B = 10
20
10
20
V BE @ V CE = 2.0 V
Figure 4. “On” Voltages
I C , COLLECTOR CURRENT (mA)
30
20 30
1.0 A
30
50
50
P (pk)
100
50
100
DUTY CYCLE, D = t 1 /t 2
T J = 25 C
t 1
200
200 300
t 2
300 500
100
500
1000
2000
1000
200