BU4507DF Philips Semiconductors, BU4507DF Datasheet

no-image

BU4507DF

Manufacturer Part Number
BU4507DF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
January 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 16kHz
I
I
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
C
F
Csat
hs
hs
1
BE
BE
= 4 A
= 4 A; I
2
= 0 V
= 0 V
= 4 A; f = 16kHz
25 ˚C
3
25 ˚C
B
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
300
-65
1.7
35
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU4507DF
MAX.
MAX.
MAX.
1500
1500
e
c
800
400
800
150
150
3.0
2.1
2.8
15
45
15
45
8
8
4
6
5
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
A
A
V
A
V
V
V
A
A
A
A
A

Related parts for BU4507DF

BU4507DF Summary of contents

Page 1

... 1 16kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU4507DF TYP. MAX. UNIT - 1500 V - 800 3 1.7 2.1 V 300 400 ...

Page 2

... 1 1 500 mA CONDITIONS 0.8 A;(I Csat / Product specification BU4507DF MIN. TYP. MAX 2500 - 22 - MIN. TYP. MAX 1 2.0 800 - - 7.5 13 3.0 0.83 0.92 1. 4.2 5 ...

Page 3

... ICsat Lc D.U.T. LB Cfb Rbe Fig.4. Switching times test circuit . hFE Ths = 25 C VCE = 1V Ths = 85 C 0.1 1 Fig.5. High and low DC current gain. hFE BU4507DF/X/Z VCE = 5V Ths = 25 C Ths = 85 C 0.1 1 Fig.6. High and low DC current gain Rev 1.000 ...

Page 4

... BU4507DF/X/Z 10 Ths = 25 C Ths = 0.1 0.01 0.001 1.0E- BU4507D ts/tf ICsat = 4 A Ths = 85 C Freq = 16 kHz 2 2 Product specification BU4507DF Normalised Power Derating PD% with heatsink compound 100 120 Ths / C Fig.10. Normalised power dissipation. PD% = 100 25˚C Zth K/W 0.5 0.2 0.1 0.05 0.02 ...

Page 5

... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1999 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 5 Product specification BU4507DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.000 o 45 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1999 6 Product specification BU4507DF Rev 1.000 ...

Related keywords