BU4540 Philips Semiconductors, BU4540 Datasheet

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BU4540

Manufacturer Part Number
BU4540
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU4540.pdf (4 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
PINNING - SOT430
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
January 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
heat collector
sink
PIN
B(AV)
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
CONDITIONS
V
T
I
f = 32kHz
f = 110kHz
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
Csat
Csat
2
mb
mb
1
BE
BE
= 16.0 A; I
3
= 0
= 0 V
= 16 A; f = 32kHz
= 8 A; f = 110kHz
25 ˚C
25 ˚C
B
= 4 A
SYMBOL
b
Objective specification
TYP.
TYP.
MIN.
t.b.f
t.b.f
-55
16
35
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU4540AL
MAX.
MAX.
MAX.
1500
e
1500
c
800
125
t.b.f
t.b.f
800
200
125
150
150
3.0
1.0
25
40
25
40
10
15
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
mA
˚C
˚C
W
W
V
V
A
A
V
A
A
V
V
A
A
A
A
s
s

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BU4540 Summary of contents

Page 1

... 32kHz f = 110kHz 32kHz Csat 110kHz Csat PIN CONFIGURATION CONDITIONS average over any 20 ms period T 25 ˚C mb CONDITIONS - in free air 1 Objective specification BU4540AL TYP. MAX. UNIT - 1500 V - 800 125 ...

Page 2

... CONDITIONS A Csat A Csat B1 2 Objective specification BU4540AL MIN. TYP. MAX 1 2 1.0 7 3.0 t.b.f - 1.0 - t.b.f - 4.2 5.35 6.5 TYP. MAX. = -8A) B2 t.b.f t.b.f t.b.f t.b.f = -4.8A) B2 t.b.f t.b.f t.b.f t.b.f Rev 1.000 ...

Page 3

... Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 20.5 - 20.7 January 1998 19.9 3.5 3.7 26.0 2.4 5.46 5.46 Fig.1. SOT430; pin 2 connected to mounting base. 3 Objective specification BU4540AL 6.2 4.1 8.5 1.9 seating plane 2.4 3.0 1.3 5.0 3.0 0.8 2.7 Rev 1.000 ...

Page 4

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 4 Objective specification BU4540AL Rev 1.000 ...

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