BCP157 SeCoS, BCP157 Datasheet
BCP157
Manufacturer Part Number
BCP157
Description
Medium Power Transistor
Manufacturer
SeCoS
Datasheet
1.BCP157.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP157
Manufacturer:
SECOS
Quantity:
20 000
01-Jun-2002 Rev. A
www.DataSheet4U.net
http://www.SeCoSGmbH.com
Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2%
1. -60Volt V CEO
2. 3 Amp continuous current
3. Low saturation voltage
∗ 1 Single pulse, Pw=10ms
∗ 2 When mounted on a 40 × 40 × 0.7 mm ceramic board.
Features
Collector-emitter saturation voltage 1
Switching Time
Current Gain
Collector-emitter saturation voltage 2 V
Base-emitter saturation voltage On
Current Gain - Bandwidth Product
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage Sat
Output capacitance
Spice parameter data is available upon urquest for this device.
Parameter
Elektronische Bauelemente
Parameter
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
°
Symbol
V
V
V
BV
BV
BV
h
h
h
h
CE(Sat)2
°
CE(sat)1
BE(Sat)
Cob
I
BE(On)
I
t
t
FE
FE
FE
FE
CBO
EBO
fT
off
on
CBO
CEO
EBO
3
4
1
2
−55 ~ +150
100
40
Min.
100
70
-80
-60
80
Limits
-5
−
−
−
−
−
−
−
−
-80
-60
150
-3
-6
0.5
-5
2
140
170
200
200
150
-150
-450
450
Typ.
-0.9
-0.8
40
−
−
−
−
−
−
3.EMITTER
1.BASE
2.COLLECTOR
RoHS Compliant Product
SOT-89
-300
-1.25
Max.
-600
300
0.1
0.1
-1.0
−
30
−
−
−
−
−
A(Pulse)
A(DC)
Unit
°C
°C
W
W
V
V
V
MHz
Unit
mV
mV
ns
µA
µA
pF
V
V
V
V
V
∗ 1
∗ 2
V
I
I
V
V
I
I
B
V
V
V
I
I
I
V
V
V
V
V
C
C
C
CC
C
C
E
1=I
CE
CE
CE
CE
CE
=−1A,I
=-3A,I
=-1A, I
CB
EB
CE
CB
CE
=−100µA, I
=−10mA, I
=−100 µA, I
=-10V, I
=-2V, I
=-2V, I
=-2V, I
=-2V, I
=-2V, I
=−4V, I
=-2V, I
=−60V, I
=−10V, I E =0A, f=1MHz
=−5V, I
B
2=-50mA
B
B
B
=-300mA
=-100mA
=-100mA
C
C
C
C
C
C
=-500mA
=-2A
Medium Power Transistor
=-50mA
=-1A
=-1A
C
C
Conditions
C
=-1A
=0
=-100mA, f=100MHz
B
E
=-500mA,
E
=0
C
=0
=0
=0
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Any changing of specification will not be informed individual
BCP157
PNP Silicon
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
0.900
Dimensions In Millimeters
e
D1
D
1.500TYP
e1
b1
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.100
b
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.114
0.035
Dimensions In Inches
C
0.060TYP
A
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.122
0.043
Page 1 of 2
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BCP157 Summary of contents
Page 1
... I t 450 off 200 200 300 100 170 h 4 150 FE 40 BCP157 PNP Silicon Medium Power Transistor Dimensions In Millimeters Symbol Min Max A 1.400 1.600 b 0.320 0.520 b1 0.360 0.560 c 0.350 0.440 D 4.400 4.600 D1 1 ...
Page 2
... Elektronische Bauelemente Electrical characteristics curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A BCP157 PNP Silicon Medium Power Transistor Any changing of specification will not be informed individual Page ...