BD735 Inchange Semiconductor, BD735 Datasheet
BD735
Manufacturer Part Number
BD735
Description
Silicon NPN Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BD735.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain -
·Collector-Emitter Breakdown Voltage-
·Complement to Type BD736
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: h
: V
V
V
V
T
I
P
T
CBO
CEO
I
CM
EBO
I
stg
C
B
FE
C
J
(BR)CEO
B
Silicon NPN Power Transistor
= 40(Min.)@ I
= 35V(Min.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
a
C
=25℃
=25℃
C
PARAMETER
=
20mA
a
=25
℃)
-55~150
VALUE
150
35
35
40
5
4
7
1
2
UNIT
℃
℃
W
V
V
V
A
A
A
isc
Product Specification
www.DataSheet4U.com
BD735
Related parts for BD735
BD735 Summary of contents
Page 1
... Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn ℃) =25 a VALUE UNIT ℃ 150 ℃ -55~150 isc Product Specification BD735 www.DataSheet4U.com ...
Page 2
... Website:www.iscsemi.cn isc Product Specification CONDITIONS I = 30mA 0.1mA 1mA 35V 20mA 2A BD735 www.DataSheet4U.com MIN MAX UNIT 0.6 V 1 ...