LP3000SOT89 Filtronic Compound Semiconductors, LP3000SOT89 Datasheet

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LP3000SOT89

Manufacturer Part Number
LP3000SOT89
Description
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Manufacturer
Filtronic Compound Semiconductors
Datasheet
1.LP3000SOT89.pdf (3 pages)
Phone: (408) 988-1845
Fax: (408) 970-9950
FEATURES
DESCRIPTION AND APPLICATIONS
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
ELECTRICAL SPECIFICATIONS @ T
frequency=1.8 GHz
Output Third-Order Intercept Point
Power Gain at 1-dB Compression
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Source Leakage Current
29 dBm Output Power at 1-dB Compression at 1.8 GHz
15 dB Power Gain at 1.8 GHz
1.3 dB Noise Figure
46 dBm Output IP3 at 1.8 GHz
55% Power-Added Efficiency
Power at 1-dB Compression
Power-Added Efficiency
Gate-Source Breakdown
Gate-Drain Breakdown
Voltage Magnitude
Voltage Magnitude
Pinch-Off Voltage
Transconductance
LP3000SOT89-1
LP3000SOT89-2
LP3000SOT89-3
Noise Figure
Parameter
Symbol
|V
|V
G-1dB
P-1dB
PAE
I
I
I
IP3
NF
G
MAX
V
BDGD
GSO
BDGS
DSS
M
P
|
|
http:// www.filss.com
L
V
V
V
V
V
V
OW
DS
Ambient
DS
DS
DS
DS
V
V
V
DS
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5V; I
Test Conditions
= 2 V; I
P
N
= 2 V; V
= 2 V; V
= 2 V; V
I
P
I
V
GD
IN
GS
IN
OISE
GS
= 15 dBm
= 25°C
= 15 mA
= 3 dBm
= 15 mA
DS
DS
= -5 V
DS
DS
DS
DS
= 50% I
= 50% I
, H
= 50% I
= 50% I
= 50% I
GS
GS
GS
= 15 mA
= 0 V
= 1 V
= 0 V
IGH
DSS
DSS
DSS
DSS
DSS
L
;
;
INEARITY
LP3000SOT89
1025
-0.25
Min
800
925
700
-10
-10
28
14
P
1060
1700
ACKAGED
Revised: 1/16/02
Email: sales@filss.com
Typ
-1.2
860
975
900
-12
-13
1.3
29
15
55
46
15
1024
1100
Max
-2.0
924
200
PHEMT
Units
dBm
dBm
mA
mA
mA
mA
mS
dB
dB
%
V
V
V
A

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LP3000SOT89 Summary of contents

Page 1

... Output IP3 at 1.8 GHz 55% Power-Added Efficiency DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0. 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications ...

Page 2

... Output Power OUT P = 3.75W – (0.025W TOT HS where T = source tab lead temperature.. PACK Load State Magnitude Phase 0.77 -154 0.68 -150 0.59 -143 http:// www.filss.com LP3000SOT89 L P IGH INEARITY ACKAGED Min Max DSS 175 3 C — ...

Page 3

... PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 OISE IGH INEARITY http:// www.filss.com LP3000SOT89 P PHEMT ACKAGED Revised: 1/16/02 Email: sales@filss.com ...

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