LP3000SOT89 Filtronic Compound Semiconductors, LP3000SOT89 Datasheet
LP3000SOT89
Related parts for LP3000SOT89
LP3000SOT89 Summary of contents
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... Output IP3 at 1.8 GHz 55% Power-Added Efficiency DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0. 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications ...
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... Output Power OUT P = 3.75W – (0.025W TOT HS where T = source tab lead temperature.. PACK Load State Magnitude Phase 0.77 -154 0.68 -150 0.59 -143 http:// www.filss.com LP3000SOT89 L P IGH INEARITY ACKAGED Min Max DSS 175 3 C — ...
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... PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 OISE IGH INEARITY http:// www.filss.com LP3000SOT89 P PHEMT ACKAGED Revised: 1/16/02 Email: sales@filss.com ...