BF620 Philips Semiconductors, BF620 Datasheet - Page 3

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BF620

Manufacturer Part Number
BF620
Description
NPN high-voltage transistors
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
CHARACTERISTICS
T
1999 Apr 21
R
R
I
I
h
V
C
f
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
CEsat
th j-a
th j-s
= 25 C unless otherwise specified.
re
NPN high-voltage transistors
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0; V
CB
CB
EB
3
= 200 V
= 200 V; T
= 5 V
CONDITIONS
CE
B
CE
CE
= 5 mA
note 1
= 30 V; f = 1 MHz
= 20 V
= 10 V; f = 100 MHz 60
CONDITIONS
j
= 150 C
50
MIN.
VALUE
100
BF620; BF622
20
Product specification
10
10
50
600
1.6
MAX.
UNIT
K/W
K/W
2
nA
nA
mV
pF
MHz
.
A
UNIT

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