LMN200B01 Diodes Incorporated, LMN200B01 Datasheet - Page 4

• Manufacturer Part Number: LMN200B01
• Description: 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
• Manufacturer: Diodes Incorporated

N-MOSFET with Gate Pull-Down Resistor (Q2)
* Pulse Test: Pulse width, tp<300 S, Duty Cycle, d<=0.02.
DS30651 Rev. 7 - 2
Electrical Characteristics:
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
Gate Pull-Down Resistor, +/- 30%
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
Notes:
4. Short duration test pulse used to minimize self-heating effect.
Characteristic
350
300
250
200
100
150
50
0
Fig. 3, Max Power Dissipation vs Ambient Temperature
V
Symbol
R
V
V
0
(BR)DSS
I
I
I
td
td
Typical Characteristics
I
GSSR
C
GSSF
DS(on)
C
V
GS(th)
D(on)
DS(on)
g
C
I
DSS
R3
I
SM
FS
oss
(on)
(off)
rss
SD
iss
S
www.diodes.com
25
T , AMBIENT TEMPERATURE (°C)
A
4 of 10
Min
500
50
60
80
80
1
@ T
75
A
= 25 C unless otherwise specified
1.86
0.08
0.15
1.55
0.88
Typ
240
350
1.4
100
37
125
-0.95
Max
0.95
3.75
115
800
2.2
1.5
1.5
50
25
20
40
1
3
2
5
150
175
Unit
mA
mA
mA
mS
K
mA
mA
pF
pF
pF
ns
ns
V
V
V
V
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
D
= 1MHz
GS
GS
GS
GS
DS
GS
GS
GS
DS
GS
GS
DS
DS
DS
DD
GS
G
= 200mA,
= 25 , R
= 0V, I
=0V, V
= 20V, V
= -20V, V
= V
= 5V, I
= 10V, I
= 10V,
= 5V, I
= 10V, I
= -25V, V
= 30V, V
= 0V, I
2 V
2 V
2 V
Test Condition
GS
DS(ON)
DS(ON)
DS(ON)
, I
D
D
D
S
DS
D
D
D
L
= 10 A
= 115 mA*
DS
= 50mA
= 50mA
GS
DS
GS
= 0.25mA
= 150
= 60V
= 115mA
= 500mA
, I
, I
= 0V
=10V,
= 0V
D
D
= 0V,
LMN200B01
= 115 mA
= 200 mA