ALD1123E Advanced Linear Devices, ALD1123E Datasheet

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ALD1123E

Manufacturer Part Number
ALD1123E
Description
QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
Manufacturer
Advanced Linear Devices
Datasheet
ORDERING INFORMATION
FEATURES
* Contact factory for industrial temperature range
© 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
Electrically Programmable Analog Device
CMOS Technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1 A
to 3000 A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 10
Very high DC current gain -- greater than 10
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68 A
Tight matching and tracking of on-resistance
between different devices with e-trim
Wide dynamic resistance matching range
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
QUAD/DUAL EPAD
A
L
D
INEAR
DVANCED
EVICES,
0 C to +70 C
16-Pin
Plastic Dip
Package
ALD1123E PC
0 C to +70 C
8-Pin
Plastic Dip
Package
ALD1121E PA
Operating Temperature Range*
Operating Temperature Range*
I
NC.
12
®
PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
0 C to +70 C
16-Pin
SOIC
Package
ALD1123E SC
0 C to +70 C
8-Pin
SOIC
Package
ALD1121E SA
9
BENEFITS
PIN CONFIGURATION
PIN CONFIGURATION
Precision matched electrically after packaging
Simple, elegant single-chip user option
to trimming voltage/current values
Excellent device matching characteristics with
or without additional electrical trim
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
V -
V -
S
2,
1,
N1,
G
D
P
D
S
G
G
D
S
P
P
N1
N1
N4
N4
N1
N4
V -
N1
N1
N1
N1
N4
3
4
1
2
3
4
6
1
2
5
7
8
DA, PA, SA PACKAGE
DC, PC, SC PACKAGE
M 1
M 1
M 4
ALD1121E
ALD1123E
ALD1123E/ALD1121E
M 2
www.DataSheet4U.com
M 2
M 3
8
5
7
6
11
16
15
14
13
12
10
9
S
D
G
P
D
P
N2
S
D
G
S
G
N2
N2
P
N2
N3
N3
N2
N2
N3
N2
N2
N3

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ALD1123E Summary of contents

Page 1

... Suitable for both coarse and fine trimming as well as matched MOSFET array applications ORDERING INFORMATION Operating Temperature Range +70 C 16-Pin Plastic Dip Package ALD1123E PC Operating Temperature Range +70 C 8-Pin Plastic Dip Package ALD1121E PA * Contact factory for industrial temperature range © 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com BENEFITS • ...

Page 2

... The ALD1123E/ALD1121E are precision matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1, SN2 share a common substrate pin V-1 which has to be connected to the most negative voltage potential. Likewise, SN3, SN4 share a common substrate pin V-2 which has to be connected to the negative voltage potential for SN3, SN4 ...

Page 3

... Initial Threshold Voltage is set at the factory EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. Initial and Final values are the same unless deliberately changed by user. 4. These parameters apply only when Vt of one or more of the devices are to be changed by user. ALD1123E/ALD1121E - - ALD1123E ALD1121E Min Typ Max Min Typ 10 ...

Page 4

... Pulse Frequency ƒ pulse ALD1123E/ALD1121E ALD1123E ALD1121E Min Typ Max Min Typ 1.4 1 400 100 -0.3 -0.3 ALD1123E ALD1121E Min Typ Max Min Typ 1.000 3.000 1.000 0.1 1 0.1 0.5 0.5 0.05 0.05 11.75 12.00 12.25 11.75 12. Advanced Linear Devices www.DataSheet4U.com Test Max Unit Conditions mA/V V ...

Page 5

... -50 - AMBIENT TEMPERATURE ( C) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE 2 + 1.5 1.0 5 0.5 1.0 1.5 2.0 THRESHOLD VOLTAGE (V) ALD1123E/ALD1121E +1 +12V +10V -1 -200 -160 -120 -80 -40 3.0 2.0 1 100 125 HIGH LEVEL OUTPUT CONDUCTANCE 75 70 ...

Page 6

... AMBIENT TEMPERATURE ( C) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0 -50 - AMBIENT TEMPERATURE ( C) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 100 -50 - AMBIENT TEMPERATURE ( C) ALD1123E/ALD1121E LOW LEVEL OUTPUT CONDUCTANCE -50 75 100 125 ...

Page 7

... DS( +125 0 100 DRAIN SOURCE ON CURRENT ( A) ALD1123E/ALD1121E DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 125 DRAIN SOURCE ON CURRENT, BIAS 10000 1000 100 10 V 1.0 0.1 0.1 75 100 125 ...

Page 8

... AMBIENT TEMPERATURE ( C) GATE SOURCE VOLTAGE vs RESISTANCE 5.0 4.0 +125 3.0 0.0V +25 C 2.0 1.0 0.1 10 100 RESISTANCE (K ) ALD1123E/ALD1121E 600 500 400 300 200 100 0 -50 -25 75 100 125 DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT -55 C 2.5 I DS(ON ...

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