1N829 Philips Semiconductors, 1N829 Datasheet
1N829
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1N829 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 20 ...
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... Mar 20 DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. k handbook, halfpage Fig.1 Simplified outline (SOD68; DO-34) and symbol. CONDITIONS amb 2 Product specification 1N821 to 1N829 1N821A to 1N829A a MAM216 MIN. MAX. UNIT 50 mA 400 mW 65 +200 C 200 C 55 ...
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... I is important, however, the stability particularly to the 1N829. The effect of the stability All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion ( V over the specified temperature range, at the specified test current (I points within the range measured and recorded at each temperature specified ...
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... Mar 20 MBG534 handbook, halfpage (2) (3) ( ref(max) (mV) MBG535 (1) (2) ( (mA) 4 1N821 to 1N829 1N821A to 1N829A 0.002 S Z (%/K) 0.001 0 0.001 0.002 0.003 Fig.3 Temperature coefficient change as a function of working current; typical values. Product specification MBG536 9 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 20 3.04 25.4 min 25.4 min max Fig.5 SOD68 (DO-34). 5 Product specification 1N821 to 1N829 1N821A to 1N829A 0.55 max MSA212 - 1 ...