DG406BP25 Dynex, DG406BP25 Datasheet
DG406BP25
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DG406BP25 Summary of contents
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... 125 DRM Double side cooled. Half sine 50Hz Double side cooled. Half sine 50Hz. HS DG406BP25 DG406BP25 Gate Turn-off Thyristor DS4090-3.0 January 2000 KEY PARAMETERS I TCM V DRM I T(AV /dt T Outline type code: P. Conditions RRM V ...
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... DG406BP25 SURGE RATINGS Symbol Parameter I Surge (non-repetitive) on-state current TSM for fusing di /dt Critical rate of rise of on-state current T dV /dt Rate of rise of off-state voltage D L Peak stray inductance in snubber circuit S GATE RATINGS Symbol Parameter V Peak reverse gate voltage RGM ...
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... V = 24V 100A 16V, No gate/cathode resistor RGM V = 2000V 1000A, dI /dt = 300A 30A, rise time 1 1000A 2500V T DM Snubber Cap /dt = 30A DG406BP25 Min. Max. Units - 1040 2300 ...
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... DG406BP25 CURVES 2.0 1.5 1.0 0.5 0 Fig.1 Maximum gate trigger voltage/current vs junction temperature 4.0 Measured under pulse conditions 4.0A G(ON) Half sine wave 10ms 3 2.0 1.0 0 1.0 2.0 3.0 Instantaneous on-state voltage V Fig.2 On-state characteristics 4/19 -50 - Junction temperature T = 25˚ 125˚C j 4.0 5.0 - (V) TM 4.0 3 100 125 150 - (˚ ...
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... Fig.4 Maximum (limit) transient thermal impedance - double side cooled 0.0001 0.001 Fig.5 Surge (non-repetitive) on-state current vs time 0.1 1.0 Time - (s) 0.01 0.1 Pulse duration - (s) DG406BP25 dc 10 100 1.0 5/19 ...
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... DG406BP25 1500 Conditions 4.0A G(ON) 1000 30˚ 500 0 0 Mean on-state current I Fig.6 Steady state rectangluar wave conduction loss - double side cooled 1500 Conditions 4.0A G(ON) 1000 30˚ 500 0 0 100 Mean on-state current I Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 dc 180˚ ...
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... Fig.9 Turn-on energy vs peak forward gate current V = 2000V 1500V 1000V D 750 1000 On-state current I - (A) T Conditions 25˚ 1000A 1.0µ Ohms S S dI/dt = 300A/µs, dI /dt = 30A/µ 2000V 1500V 1000V (A) FGM PEAK FORWARD DG406BP25 1250 1500 80 7/19 ...
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... DG406BP25 1125 Conditions 125˚C, I 1000 1 Ohms, S 875 dI /dt = 300A /dt = 30A 750 625 500 375 250 125 0 0 250 2000 1500 1000 500 Peak forward gate current I Fig.11 Turn-on energy vs peak forward gate current ...
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... FIG 14 DELAY TIME & RISE TIME s PEAK FORWARD Fig.14 Delay time & rise time vs peak forward gate current = 30A 750 1000 - (A) T Conditions 125˚ 1000A 1.0µ Ohms, S dI/dt = 300A/µs, dI /dt = 30A/µ 2000V (A) FGM DG406BP25 1250 1500 80 9/19 ...
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... DG406BP25 2000 Conditions 25˚ 1.0µ /dt = 30A/µs GQ 1500 1000 500 0 0 250 2000 Conditions 25˚ 1.0µ 1000A T 1500 1000 500 0 10 Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 500 750 On-state current I T Fig.15 Turn-off energy vs on-state current ...
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... Rate of rise of reverse gate current dI FIG 18 TURN OFF ENERGY LOSS Fig.18 Turn-off energy loss vs rate of rise of reverse gate current V 0.75x V 0.5x V 750 1000 On-state current STATE CURRENT 30 40 /dt - (A/µs) GQ RATE OF RISE OF DG406BP25 DRM DRM DRM 1250 1500 V DRM 0.75x V DRM 0.5x V DRM 50 60 11/19 ...
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... DG406BP25 2500 Conditions 125˚ DRM dI /dt = 30A/µs GQ 2000 1500 C 1000 500 0 0 250 FIG 19 TURN OFF ENERGY 2.0 Conditions 1 /dt = 30A 1.5 1.0 0 250 12/ 1.0µ 0.5µF S 500 750 On-state current STATE CURRENT Fig.19 Turn-off energy vs on-state current ...
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... GQ 1.5 1.0 0 250 500 On-state current I FIG 22 GATE FALL TIME Fig.22 Gate fall time vs on-state current T = 125˚ 25˚ /dt - (A/µs) GQ RATE OF RISE 125˚ 25˚C j 750 1000 1250 - ( STATE CURRENT DG406BP25 60 1500 13/19 ...
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... DG406BP25 2.00 1.75 1.50 1.25 1.00 10 Fig.23 Gate fall time vs rate of rise of reverse gate current 500 Conditions 1.0µ /dt = 30A/µs GQ 400 300 200 100 0 250 14/ Rate of rise of reverse gate current dI FIG 23 GATE FALL TIME RATE OF RISE OF 500 750 Turn-off current I - (A) T Fig.24 Peak reverse gate current vs turn-off current ...
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... Fig.25 Peak reverse gate current vs rate of rise of reversegate current 4000 Conditions 1.0µ /dt = 30A/µs GQ 3000 2000 1000 0 0 250 500 Fig.26 Turn-off gate charge vs on-state current /dt - (A/µ 125˚ 25˚C j 750 1000 On-state current I - (A) T DG406BP25 = 125˚ 25˚ 1250 1500 15/19 ...
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... DG406BP25 4000 3500 3000 2500 2000 1500 10 Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 500 0 0.1 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/ Rate of rise of reverse gate current 1250V 1650V D 1.0 10 Gate cathode resistance R Conditions 1.0µ ...
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... RG(min 16V RG(max) These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 0. / TAIL G(ON) 0. 0.5I GQM V (RG)BR I GQM DG406BP25 17/19 ...
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... DG406BP25 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Auxiliary cathode Gate ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors ...
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... Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4090-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM DG406BP25 19/19 ...