FGM100D06V1 FineSPN, FGM100D06V1 Datasheet

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FGM100D06V1

Manufacturer Part Number
FGM100D06V1
Description
HALF-BRIDGE IGBT
Manufacturer
FineSPN
Datasheet
1.FGM100D06V1.pdf (6 pages)
www.DataSheet.co.kr
“HALF-BRIDGE” IGBT
Absolute Maximum Ratings
Electrical Characteristics
Mounting
Symbol
Symbol
Features
▪ 10μs short circuit capability
▪ Low turn-off losses
▪ Short tail current
V
Weight
Torque
V
V
V
V
(BR)CES
CE(ON)
I
I
V
T
V
T
I
I
GE(th)
F ine
F ine
CES
GES
F ine
F ine
F ineSiliconP ow erN etw orks
F ineSiliconP ow erN etw orks
CES
GES
I
CM
I
FM
T
SC
stg
FM
C
F
iso
j
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
S P N
S P N
S P N
S P N
Parameter
Parameter
Applications
▪ AC & DC motor controls
▪ General purpose inverters
▪ Optimized for high current inverter
▪ Servo controls
▪ UPS
▪ Robotics
stages (AC TIG welding machines)
@ Tj = 25℃ (unless otherwise specified)
@ Tc = 25℃ (per leg)
Preliminary
- 1 -
V
T
T
T
T
AC 1 minute
Min
600
3.0
GE
C
C
C
C
-
-
-
-
= 70℃ (25℃)
= 70℃ (25℃)
= 70℃ (25℃)
= 100℃
= 0V,
Test condition
Typ
2.2
4.5
1.6
I
C
-
-
-
= 250
Package : V1
μA
Max
±100
500
2.7
6.0
1.9
-
Unit
μA
nA
V
V
FGM100D06V1
V
CE(ON)
V
I
V
V
V
I
C
C
GE
CE
GE
CE
-40 ~ 150
-40 ~ 125
V
@ Ic = 100A
100(130)
200(260)
= 100A,
= 100A
Rating
80(100)
Test condition
CES
Ic = 100A
2500
= V
=
= 0V, V
± 20
= 0V, V
600
200
190
3.5
3.5
10
0V, I
GE,
typ. = 2.2V
= 600V
C
I
V
C
CE
GE
=
GE
=
250μA
= 600V
= ±20V
250μA
=
Unit
15V
Nm
Nm
μs
℃
℃
V
V
A
A
A
A
V
g
Datasheet pdf - http://www.DataSheet4U.net/

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FGM100D06V1 Summary of contents

Page 1

... 70℃ (25℃ 70℃ (25℃ 70℃ (25℃ 100℃ minute @ Tj = 25℃ (unless otherwise specified) Parameter Min 600 - 3 FGM100D06V1 V = 600V CES Ic = 100A V typ. = 2.2V CE(ON 100A Package : V1 Rating I μA 600 = 250 C ± 20 100(130) 200(260) 80(100) 200 10 2500 -40 ~ 150 -40 ~ 125 190 3 ...

Page 2

... Junction-to-Case (IGBT Part, Per 1/2 Module) ΘJC R Junction-to-Case (Diode Part, Per 1/2 Module) ΘJC R Case-to-Heat Sink (Conductive grease applied) ΘCS Preliminary @ Tj = 25℃ (unless otherwise specified) Parameter Min - 6900 - - - - - - - - Parameter - 2 - FGM100D06V1 Typ Max Unit Test condition - V 30V 730 - 1.0MHz 190 - 25℃ ...

Page 3

... ineSiliconP ow erN etw orks F ineSiliconP ow erN etw orks Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics Preliminary Fig 2. Power Dissipation vs. Case Temperature Fig 4. Maximum Forward Voltage Drop vs. Instantaneous Forward Current - 3 - FGM100D06V1 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 4

... F ine F ine ine F ine ineSiliconP ow erN etw orks F ineSiliconP ow erN etw orks Fig 5. Typical Transfer Characteristics Fig 7. Typical Gate Charge vs. V Preliminary Fig 6. Typ. Capacitance vs. V Fig 8. Turn-off SOA FGM100D06V1 CE Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 5

... F ine F ine ine F ine ineSiliconP ow erN etw orks F ineSiliconP ow erN etw orks Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case Preliminary - 5 - FGM100D06V1 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 6

... Data and specifications subject to change without notice. Headquarter (www.finespn.com) 305-11, Wonnam-Ri, Eumbong-Myun, Asan-City, Chungcheongnam-Do, KOREA Tel)+82-41-544-3585, Fax)+82-41-544-3582 Preliminary (dimensions in mm C2E1 - 6 - FGM100D06V1 May 2006 Sales & Marketing Gyeonggi Technopark P1-311 1271-11 Sa1-Dong, Sangnok-Gu, Ansan, KOREA Tel)+82-31-500-3517, Fax)+82-31-500-3510 Datasheet pdf - http://www.DataSheet4U.net/ ...

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