MG200F6ES61 Powerex Power Semiconductors, MG200F6ES61 Datasheet - Page 3

• Manufacturer Part Number: MG200F6ES61
• Description: Compact IGBT Series Module
• Manufacturer: Powerex Power Semiconductors

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG200J6ES61
Six IGBTMOD™
Compact IGBT Series Module
200 Amperes/600 Volts
5/05
500
400
300
200
100
10
10
10
12
10
0
2
1
0
8
6
4
2
0
0
0
COLLECTOR-EMITTER VOLTAGE, V
SATURATION VOLTAGE CHARACTERISTICS
0
V
V
R
V
T
CC
GE
G
GE
0.5
j
COLLECTOR CURRENT, I
= 125°C
= 10Ω
GATE-EMITTER VOLTAGE, V
OUTPUT CHARACTERISTICS
= 300V
= ±15V
SWITCHING LOSS (OFF) VS.
50
= 15V
T
T
T
T
j
j
j
j
COLLECTOR CURRENT
= 25°C
= 125°C
I
= 25°C
= 125°C
C
I
1.0
C
COLLECTOR-EMITTER
5
= 200A
= 100A
100
(TYPICAL)
(TYPICAL)
1.5
(TYPICAL)
10
2.0
150
I
C
C
, (AMPERES)
= 400A
2.5
GE
CE(sat)
, (VOLTS)
15
200
3.0
, (VOLTS)
250
3.5
20
500
400
300
200
100
10
10
10
12
10
0
8
6
4
2
0
2
1
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
0
FREE-WHEEL DIODE CHARACTERISTICS
T
V
V
R
V
j
CC
GE
G
GE
0.5
= -40°C
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
= 10Ω
= 300V
= ±15V
FORWARD VOLTAGE, V
= 0V
T
T
50
SWITCHING LOSS (ON) VS.
T
T
Tj = -40°C
j
j
j
j
COLLECTOR CURRENT
= 25°C
= 125°C
COLLECTOR-EMITTER
5
I
= 25°C
= 125°C
1.0
C
I
C
= 200A
= 100A
100
(TYPICAL)
(TYPICAL)
(TYPICAL)
1.5
10
2.0
150
I
C
C
F
, (AMPERES)
, (VOLTS)
GE
= 400A
2.5
, (VOLTS)
15
200
3.0
250
3.5
20
500
400
300
200
100
10
10
10
12
10
8
6
4
2
0
0
2
1
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
0
V
T
V
V
R
j
CE
CC
GE
G
= 25°C
GATE-EMITTER VOLTAGE, V
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
2
= 10Ω
= 5V
= 300V
= ±15V
SWITCHING LOSS (OFF) VS.
T
T
T
T
T
5
j
j
j
j
j
GATE RESISTANCE, R
= 25°C
= 125°C
COLLECTOR-EMITTER
I
= 25°C
= 125°C
= -40°C
5
C
I
C
GATE RESISTANCE
4
= 200A
= 100A
10
(TYPICAL)
(TYPICAL)
(TYPICAL)
6
10
8
15
I
C
= 400A
GE
G
GE
10
, (
, (VOLTS)
, (VOLTS)
15
Ω
)
20
12
20
14
25
3