DCR1008SF Dynex Semiconductor, DCR1008SF Datasheet - Page 6

• Manufacturer Part Number: DCR1008SF
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1008SF
6/8
100000
10000
0.001
1000
0.01
100
Fig.6 Transient thermal impedance - junction to case
0.1
0.001
0.1
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
t
p
d.c.
= 1.6ms
Rate of decay of on-state current, dI/dt - (A/µs)
dI/dt
I
T
0.01
Double side
Effective thermal resistance
Fig.4 Stored charge
0.022
0.024
0.026
0.027
Junction to case ˚C/W
1.0
I
RM
Q
S
Time - (s)
Anode side
0.038
0.040
0.042
0.043
0.1
Conditions:
T
j
= 125˚C, I
10
Max. Q
Min. Q
Min. I
Max. I
Double side cooled
Anode side cooled
T
= 3000A
1.0
RR
RR
S
S
100
10000
100
10
1000
10
Fig.7 Surge (non-repetitive) on-state current vs time (with
V
100
0.1
20
10
40
30
10
GD
0.001
0
1
1
Pulse width
10ms
1ms
100
200
500
µs
ms
I
2
150
150
150
150
t
50
20
50% V
Fig.5 Gate characteristics
Frequency Hz
0.01
100
150
150
150
Gate trigger current, I
50
-
10
RRM
400
150
125
100
25
-
1
Duration
at T
Table gives pulse power P
0.1
case
2 3 45
Cycles at 50Hz
www.dynexsemi.com
= 125˚C)
GT
- (A)
10
Region of certain
1
I
2
triggering
t = Î
20 30
GM
2
2
in Watts
x t
50
700
650
600
550
500
450
10