DCR1020SF61 Dynex Semiconductor, DCR1020SF61 Datasheet - Page 8

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DCR1020SF61

Manufacturer Part Number
DCR1020SF61
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
DCR1020SF
8/10
10000
25
20
15
10
5
0
1000
Fig.12 Surge (non-repetitive) on-state current vs time
100
1
0.1
I
2
t
Conditions:
T
I
V
T
j
R
= 550A
= 125˚C
ms
Rate of decay of on-state current, dI/dt - (A/ s)
= 100V
(with 50% V
Fig.10 Stored charge
10
1.0
1
Duration
RRM
@ T
2 3 4 5
Cycles at 50Hz
case
= 125˚C)
dI/dt
10
10
I
T
I
2
t = Î
Q
20 30
Max
2
Min
RA3
2
x t
I
RR
25% I
50
0.4
0.2
0.1
0
0.3
RR
100
1000
0.001
Fig.13 Transient thermal impedance - junction to case
100
0.01
10
0.1
0.1
0.001
Conditions:
T
I
V
T
j
R
= 550A
= 125˚C
Rate of decay of on-state current, dI/dt - (A/ s)
= 100V
Fig.11 Reverse recovery current
0.01
1.0
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
Time - (s)
d.c.
0.1
www.dynexsemi.com
Effective thermal resistance
Double side
Junction to case ˚C/W
0.022
0.024
0.026
0.027
10
Anode side cooled
1.0
Double side
Max
Min
Anode side
cooled
0.038
0.040
0.042
0.043
100
10

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