DCR1374SBA Dynex Semiconductor, DCR1374SBA Datasheet - Page 6

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DCR1374SBA

Manufacturer Part Number
DCR1374SBA
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
DCR1374SBA
Fig.6 Surge (non-repetitive) on-state current vs time (with
6/9
100
10000
50
25
75
1000
0
100
1
0.1
I
Conditions:
T
I
V
t
T
p
2
j
R
t
= 1ms - Trapezoidal
= 125˚C
= 800A
= 100V
ms
Rate of decay of on-state current dI/dt - (A/µs)
50% V
Fig.4 Stored charge
10
1.0
RRM
1
Duration
at T
2 3 4 5
case
Cycles at 50Hz
dI/dt
125˚C)
I
T
10
10
I
2
t = Î
20 30
I
2
RR
Q
2
x t
S
50
8
7
6
5
4
3
100
0.0001
100
V
0.001
0.1
Fig.7 Maximum (limit) transient thermal impedance -
10
0.01
GD
0.001
0.1
1
0.001
Table gives pulse power P
Pulse width
10ms
1ms
100
200
500
µs
0.01
Pulse frequency Hz
Fig.5 Gate characteristics
150
150
150
150
50
20
0.01
junction to case (˚C/W)
Gate trigger current I
100
150
150
150
100
-
3 phase 120˚
6 phase 60˚
Conduction
0.1
Halfwave
400
150
125
100
Time - (s)
25
d.c.
-
GM
0.1
in Watts
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Double side
Effective thermal resistance
1
GT
0.0130
0.0141
0.0170
0.0200
Junction to case ˚C/W
- (A)
Double side cooled
Anode side cooled
Region of certain
1
10
triggering
Anode side
0.0210
0.0221
0.0250
0.0280
10
100

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