DCR1595SW47 Dynex Semiconductor, DCR1595SW47 Datasheet - Page 5

• Manufacturer Part Number: DCR1595SW47
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

CURVES
V
V
www.dynexsemi.com
GATE TRIGGER CHARACTERISTICS AND RATINGS
TM
TM
10000
Symbol
9000
8000
7000
6000
5000
4000
3000
2000
1000
P
= A + Bln (I
V
V
V
EQUATION
I
P
V
V
I
FGM
G(AV)
FGM
RGM
GT
FGN
GD
GM
GT
0
0.5
Fig.2 Maximum (limit) on-state characteristics
T
j
= 125˚C
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
T
) + C.I
1
Instantaneous on-state voltage, V
T
+D. I
1.5
T
Parameter
2
2.5
T
- (V)
3
3.5
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table fig. 8 and 9
Where
these values are valid for T
DRM
DRM
DRM
= 5V, T
= 5V, T
3500
3000
2000
1500
1000
4000
2500
500
T
0
Fig.3 Maximum (limit) on-state characteristics
case
0.6
= 125
case
case
Test Conditions
T
A = –0.5011559
B = 0.2638417
C = 2.536711x10
D = –0.01249303
= 25
j
= 25
= 125˚C
0.8
o
C
o
Instantaneous on-state voltage, V
o
C
C
-
-
1
j
= 125˚C for I
1.2
-4
1.4
T
500A to 10000A
DCR1596SW
1.6
Max.
0.25
0.25
400
150
T
30
30
10
4
5
- (V)
1.8
Units
mA
W
W
V
V
V
V
V
A
5/10
2