DCR760N85 Dynex Semiconductor, DCR760N85 Datasheet - Page 3

• Manufacturer Part Number: DCR760N85
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DYNAMIC CHARACTERISTICS
I
Symbol
RRM
dV/dt
V
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dI/dt
T(TO)
Q
t
r
I
t
I
gd
/I
H
T
q
L
S
DRM
SEMICONDUCTOR
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage – Low level
Threshold voltage – High level
On-state slope resistance – Low level
On-state slope resistance – High level
Delay time
Turn-off time
Stored charge
Latching current
Holding current
Parameter
At V
To 67% V
From 67% V
Gate source 30V, 10 ,
t
100A to 500A at T
500A to 3000A at T
100A to 500A at T
500A to 3000A at T
V
t
T
dV
I
V
T
T
r
r
T
j
j
j
D
Rpeak
< 0.5µs, T
= 0.5µs, T
= 125° C, V
= 2000A, T
= 25° C, V
= 25° C, R
DR
= 67% V
RRM
/dt = 20V/µs linear
= 60% V
/V
DRM
DRM
DRM
j
j
D
G-K
DRM
= 25° C
= 125° C
, T
R
, T
j
= 5V
Test Conditions
= 125° C, dI/dt – 1A/µs,
= 200V, dI/dt = 1A/µs,
drm
, gate source 30V, 10
= , I
case
j
to 2x I
= 125° C, gate open
, V
case
case
case
case
= 125° C
R
TM
= 125° C
= 125° C
= 40% V
T(AV)
= 125° C
= 125° C
= 500A, I
Repetitive 50Hz
Non-repetitive
drm
T
= 5A
1000
3400
Min.
TBD
TBD
TBD
-
-
-
-
-
-
-
-
DCR760N85
1.081
1.243
1.694
1.342
Max.
1500
1600
5600
TBD
TBD
TBD
200
100
200
Units
V/µs
A/µs
A/µs
m
m
mA
mA
mA
µC
µs
µs
V
V
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